Real-time calibration for wafer processing chamber lamp modules

ABSTRACT

An apparatus, a system and a method are disclosed. An exemplary apparatus includes a wafer processing chamber. The apparatus further includes radiant heating elements disposed in different zones and operable to heat different portions of a wafer located within the wafer processing chamber. The apparatus further includes sensors disposed outside the wafer processing chamber and operable to monitor energy from the radiant heating elements disposed in the different zones. The apparatus further includes a computer configured to utilize the sensors to characterize the radiant heating elements disposed in the different zones and to provide a calibration for the radiant heating elements disposed in the different zones such that a substantially uniform temperature profile is maintained across a surface of the wafer.

PRIORITY DATA

The present application is a divisional application of U.S. applicationSer. No. 13/471,583, filed May 15, 2012, which is incorporated herein byreference in its entirety.

BACKGROUND

In some semiconductor manufacturing processes, wafer processing chambersor reactors are used to process wafers from which integrated circuitsare made. During the manufacturing process, a wafer is placed on a waferholder (or susceptor). After the wafer has been placed on the waferholder, it is placed in a processing chamber or reactor where a hightemperature process is performed using lamp modules. The lamp modulesmay be located in different zones over and under the wafer holder toheat the wafer holder and the wafer such that wafer processing may beperformed on the wafer.

For example, wafer processing such as chemical vapor deposition (CVD),using lamp modules, may be performed to deposit or epitaxially (epi)grow film layers on the wafer. As the CVD process is carried out, theamount of film deposited on the wafer may vary as a function of thetemperature profile of the wafer. The temperature profile across thewafer may not be uniform for a variety of reasons. For example, thetemperature profile may not be uniform across the wafer because variouslamp module's power output may deteriorate over time, thereby causingtemperature differences between various areas of the wafer. As such, theuneven temperature profile results in uneven/varying film thickness anduniformity that ultimately adversely affects the performance of theintegrated circuit made from the wafer. Temperature profile uniformitycan also be important for other wafer processing such as rapid thermalprocessing (RTP), annealing, doping, etching, and other processes.Accordingly, there is a need for an improved method and device to moreuniformly control wafer temperature during wafer processing.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 illustrates a method for calibration of wafer processingapparatus lamp modules.

FIG. 2 illustrates a cross-sectional view of one embodiment of a waferprocessing apparatus according to various aspects of the presentdisclosure.

FIG. 3 illustrates a cross-sectional view of one embodiment of the waferprocessing apparatus of FIG. 2, during operation, according to variousaspects of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed. Also, thecomponents disclosed herein may be arranged, combined, or configured inways different from the exemplary embodiments shown herein withoutdeparting from the scope of the present disclosure. It is understoodthat those skilled in the art will be able to devise various equivalentsthat, although not explicitly described herein, embody the principles ofthe present invention.

Modern semiconductor manufacturing may utilize a processing chamber or areactor to perform high temperature wafer processing. Wafer processingsuch as chemical vapor deposition (CVD), rapid thermal processing (RTP),annealing, doping, etching, and other processes, rely on having uniformor even temperature profiles across the surfaces (top and bottomsurface) of the wafer. As an example, in various embodiments, to provideuniform temperature profiles, after receiving new radiant heatingelements or performing preventive maintenance on the radiant heatingelements, calibrations of the radiant heating elements are provided.Providing the calibrations of the lamp modules may include performingwafer processing test (dummy) runs to epitaxially (epi) grow a materiallayer on a test wafer. Because the amount of epi grown material on thetest wafer is a function of a temperature during the growth process andas such will vary according to variations in a temperature profileacross the test wafer, after the material layer is epi-grown, offlinemonitoring, is performed to identify areas where lamp module power needsto be adjusted so that the temperature profile across the test wafer ismore uniform. Offline monitoring may include measuring the materiallayer thickness across the test wafer surface with metrology tools toidentify the areas where lamp module power need to be adjusted. Once theareas are identified, the power to the lamp modules is adjusted suchthat there is a uniformity in temperature across the test wafer. Thesesteps may be repeated as necessary (usually 2-5 cycles) until it isdetermined that there is a relatively uniform temperature profile acrossthe test wafer.

After adjusting the power for the lamp modules, production may proceedusing the processing chamber with the calibrated or adjusted lampmodules. During production, however, lamp module response or heatingefficiency may deteriorate or decay over time, thereby resulting invariation of temperature profile across a wafer. This leads tofabrication challenges.

According to various aspects of the present disclosure, calibration forprocessing chamber lamp modules is disclosed. The disclosed calibrationmethod and apparatus allows for maintaining constant or uniformtemperature profiles across the wafer. For example, the disclosedcalibration method and apparatus allows for initially characterizinglamp modules and thereafter compensating for efficiency decay byincreasing power for the lamp modules zone-by-zone, without having totake the processing chamber offline. This may be provided by eithercompensating while actual wafer processing is taking place or duringidle periods (e.g., run-to-run). The various aspects of such acalibration method and apparatus is disclosed in more detail below.

With reference to FIG. 1, a method 100 for calibration of waferprocessing apparatus lamp modules is provided. The method 100 begins atblock 102 where a wafer processing chamber, radiant heating elementsdisposed in different zones and configured to heat different surfaceareas of a wafer located within the wafer processing chamber, andsensors configured to monitor heat radiated from the radiant heatingelements for each of the different zones are provided. The methodcontinues at block 104 where an initial base calibration of the radiantheating elements is performed to characterize the radiant heatingelements and thereby achieve a substantially uniform temperature profileacross the wafer. The method continues at block 106 where a real-timecalibration of the radiant heating elements is performed to compensatefor a change in performance of the radiant heating elements and therebymaintain a substantially uniform temperature profile across the wafer.In certain embodiments, the calibration may take into account otherwafer processing chamber temperature profiles to provide for uniformtemperature profiles across multiple wafer processing chambers. Thesteps of method 100 may be repeated as necessary to ensure that thetemperature profile across the wafer remains uniform. It is understoodthat the heating process may include performing a process such aschemical vapor deposition (CVD), rapid thermal processing (RTP),annealing, etching, doping, or any other suitable wafer manufacturingprocess. Additional steps can be provided before, during, and after themethod 100.

With reference to FIG. 2, illustrated is a cross-sectional view of oneembodiment of a wafer processing apparatus 200 according to variousaspects of the present disclosure. The wafer processing apparatus 200includes a processing chamber 210 within which a wafer 212 is processed.The processing chamber 210 may include quartz or any suitable material.The wafer 212 may include an elementary semiconductor material, such assilicon or germanium in a crystalline structure; a compoundsemiconductor, such as silicon germanium, silicon carbide, galliumarsenic, gallium phosphide, indium phosphide, indium arsenide, and/orindium antimonide; a combinations thereof; or any suitable material.

The wafer processing apparatus 200 further includes a center top zone214 of radiant heat elements (which may be referred to as lamp modules)positioned above the wafer 212 in a uniform formation about the center(i.e., around center line, CL) to provide heating for a center zone ofthe wafer 212. The wafer processing apparatus 200 further includes anedge top zone 216 of lamp modules positioned above the wafer 212 andcircumscribing the center top zone 214 lamp modules to provide heatingfor an edge zone of the wafer 212. The center top zone 214 and the edgetop zone 216 may include any number of lamp modules according to designrequirements. The lamps modules may be, for example, halogen lamps, orany suitable radiant heat elements.

The wafer processing apparatus 200 further includes a center bottom zone218 of lamp modules positioned below the wafer 212 in a uniformformation about the center (i.e., around center line, CL) to provideheating for a center zone of the wafer 212. The wafer processingapparatus 200 further includes an edge bottom zone 220 of lamp modulespositioned below the wafer 212 and circumscribing the center bottom zone218 lamp modules to provide heating for an edge zone of the wafer 212.The center bottom zone 218 and the edge bottom zone 220 may include anynumber of lamp modules according to design requirements. The lampsmodules may be, for example, halogen lamps, or any suitable radiant heatelements.

The wafer processing apparatus 200 further includes center top sensors222 and edge top sensors 224. The center top sensors 222 and the edgetop sensors 224 are sensors operable to sense or measure temperature orenergy produced from the center top zone 214 lamp modules and from theedge top zone 216 lamp modules. The center top sensors 222 and the edgetop sensor 224 may include any number of sensors positioned at anyappropriate distance (D1) away from the center top zone 214 lamp modulesand from the edge top zone 216 lamp modules. In the present embodiment,the center top sensors 222 and the edge top sensors 224 are positionedoutside the chamber 210 and at a distance D1 of less than about 40 cmfrom the center top zone 214 lamp modules and from the edge top zone 216lamp modules. Because the center top sensors 222 and the edge topsensors 224 are positioned outside the chamber 210 transient temperaturevariations induced by the wafer 212 are avoided. The sensors may be, forexample, thermocouples or any suitable sensing elements.

The wafer processing apparatus 200 further includes center bottomsensors 226 and edge bottom sensors 228. The center bottom sensors 226 aare sensors operable to sense or measure temperature or energy producedfrom the lamp modules of the center bottom zone 218 and from the lampmodules of the edge bottom zone 220. The center bottom sensors 226 andthe edge bottom sensors 228 may include any number of sensors positionedat any appropriate distance (D2) away from the lamp modules of thecenter bottom zone 218 and from the lamp modules of the edge bottom zone220. In the present embodiment, the center bottom sensors 226 and theedge bottom sensor 228 are positioned outside the chamber 210 and at adistance D2 of less than about 40 cm from the center bottom zone 218lamp modules and from the edge bottom zone 220 lamp modules. Because thecenter bottom sensors 226 and the edge bottom sensors 228 are positionedoutside the chamber 210 transient temperature variations induced by thewafer 212 are avoided. The sensors may be, for example, thermocouples orany suitable sensing elements.

The wafer processing apparatus 200 may further include gas deliverymechanisms, pressure control mechanisms, vents, and any other suitablestructures and mechanisms in accordance with design requirements.

Referring to FIG. 3, during operation, a wafer processing process may beemployed that uses the lamp modules of the center top zone 214, the lampmodules of the edge top zone 216, the lamp modules of the center bottomzone 218, and the lamp modules of the edge bottom zone 220 to expose thewafer 212 to the radiant heat 230 and thereby heat the wafer 212. Asillustrated, the radiant heat 230 from each zone interacts with theradiant heat from adjacent zones and thereby has a compound effect onthe temperature profile across the wafer 212. Further, the radiant heat230 from the top zones (i.e., 214 and 216) heats the top surface of thewafer 212 and also affects the opposing bottom surface of the wafer 212.Accordingly, the temperature profile across the wafer 212 is affected byradiant heat 230 interactions between adjacent and opposing zones.

To ensure that the lamp modules of the center top zone 214, the lampmodules of the edge top zone 216, the lamp modules of the center bottomzone 218, and the lamp modules of the edge bottom zone 220 function toproduce a substantially uniform temperature profile across the wafer212, the lamp modules for each zone are initially characterized and abase calibration is produced. As an example, the initialcharacterization may include performing a wafer processing process(e.g., CVD, annealing, etc. . . . ) on a test (or dummy) wafer. As thetest wafer is being processed, the sensors 224 for each zone monitor thetemperature radiated from the lamp modules of each zone 214, 216, 218,and 220. Based on the monitored temperature of the sensors 224, the lampmodules for each zone are characterized and a base calibration isdeveloped. The base calibration may take any appropriate form.

The calibration for the lamp modules of each zone may take the form of atable representing the relative power percentage for the lamp modulesfor each zone. As an example, during the initial characterization forthe base calibration it may be observed that to produce a uniformtemperature profile across the wafer 212, at a target temperature of X°Celsius, the lamp modules of the center top zone 214 require 10.5% of atotal power commanded, the edge top zone 216 require 59.5% of the totalpower commanded, the center bottom zone 218 require 12.0% of the totalpower commanded, and the edge bottom zone 220 require 18.0% of the totalpower commanded. The total power commanded is a function of the targettemperature X utilized by the wafer processing being performed (e.g.,CVD, RTP, annealing, etc. . . . ). The base calibration may be presentedin individual calibration format, in a table format (two dimensional orthree dimensional table), or any appropriate format. In an example, anindividual calibration format may include providing a calibrationparameter per zone (e.g., Center_Top=10.5%, Edge_Top=59.5%,Center_Bottom=12.0%, and Edge_Bottom=18.0). In another example, a tableformat may include a calibration table as illustrated below in TABLE 1.

TABLE 1 Percent of total power commanded per zone. Center Edge Top 10.5%59.5% Bottom 12.0% 18.0%

As another example, a table format may include a calibration table asillustrated below in TABLE 2.

TABLE 2 Percentage power ratio of total power commanded per zone. Top toBottom Top Center to Edge Bottom Center to Edge Ratio 70.0% 15.0% 40.0%

In the embodiment of TABLE 2, for example, the Top to Bottom ratio isthe top to bottom ratio of total power commanded. In other words, in theembodiment of TABLE 2, the top zones (e.g., center top and edge top)receive 70% of the total power commanded and the bottom zones (e.g.,center bottom and edge bottom) receive the remaining 30%. The Top Centerto Edge ratio is the center top to bottom top ratio of the 70% of totalpower commanded. In other words, in the embodiment of TABLE 2, thecenter top zone receives 70%×15% of the total power commanded (i.e.,10.5%) and the edge top zone receives 70%×85% of the total powercommanded (i.e., 59.5%). The Bottom Center to Edge ratio is the centerbottom to edge bottom ratio of the 30% of the total power commanded. Inother words, in the embodiment of TABLE 2, the center bottom zonereceives 30%×40% of the total power commanded (i.e., 12%) and the edgebottom zone receives 30%×60% of the total power commanded (i.e., 18%).

It is understood that although in the present embodiment the basecalibration parameters are represented as a form of percentages orratios of total power commanded, the calibration parameters may be inany appropriate form or units. A 3D table representation may be used,for example, where nonlinear system response and/or interaction betweenvarious zones may require different calibration parameter values. Forexample, although the above calibration parameter values may produce auniform temperature profile at a total power commanded of 2000 Watts,the above calibration parameter values may not produce a uniformtemperature profile at a total power commanded of 1000 Watts due tononlinear system response or different interactions between thedifferent zones.

After the lamp modules for each different zone 214, 216, 218, and 220are initially characterized and a base calibration is provided, thewafer processing apparatus 200 may be released for production. Duringproduction, over time, the response of the lamp modules of the differentzones 214, 216, 218, and 220 may change. As an example, the change inresponse of the lamp modules of the different zones 214, 216, 218, and220 may result from decay in lamp efficiency. The response change of thelamp modules of the different zones 214, 216, 218, and 220 willultimately result in a non uniform temperature profile and therebyadversely affect the manufacturing process if left unchecked.

To address the response change of the lamp modules of the differentzones 214, 216, 218, and 220 a real-time calibration of the lamp modulesis performed to compensate for the response change of the lamp modulesand thereby maintain a substantially uniform temperature profile acrossthe wafer 212. The real-time calibration may be performed while thewafer processing apparatus 200 is in an online state. For example, whilethe wafer processing (e.g., CVD, RTP, annealing, etc. . . . ) thatincludes a heating process is being performed by the lamp modules ofeach of the different zones 214, 216, 218, and 220, the sensors 222,224, 226, and 228, monitor the radiant heat 230 temperature from each ofthe lamp modules of each of the different zones, respectively. Based onthe monitored temperature, the response change of the lamp modules ofeach different zone 214, 216, 218, and 220 is determined. Based on thedetermined response change, the lamp modules of each different zone 214,216, 218, and 220 are calibrated in real-time to compensate for thedetermined response change, thereby maintaining a substantially uniformtemperature profile across the wafer 212. Calibrating the lamp modulesof each different zone 214, 216, 218, and 220 in real-time may includemodifying the base calibration parameter values or providing an offsetused to offset the base calibration parameter values. It is understoodthat the offset may take the form of constant values that are added tothe base calibration parameter values, multiplier values that are usedto ratio the base calibration parameter values, or any appropriate form.

To illustrate the real-time calibration process, the edge top zone 216is discussed below. For example, assume that with the base calibrationrepresented in TABLE 2, at a total power commanded of 1680.5 Watts and azone power commanded of 1000 Watts (59.5%×1680.5 W=1000 W), the edge topzone 216 produces an initial temperature of 200° Celsius which ismeasured by the sensors 224. Over time, the performance of the lampmodules of the edge top zone 216 deteriorate and the lamp modules of theedge top zone 216 produce only 190° Celsius at the same zone powercommanded of 1000 Watts. Based on the temperature of 190° Celsiusmonitored by the sensors 224, it is determined that the lamp modules ofthe edge top zone 216 have a response change of 5%. Based on thedetermined response change of 5%, the calibration of the lamp modules ofthe edge top zone 216 may be compensated in real-time bymodifying/overriding the base calibration value with an updatedcalibration value of 64.5%, by adding a calibrated value of 10 Watts tothe 1000 Watts, by multiplying the 1000 Watts by a calibrated value of105%, or by any other appropriate means of compensating for the responsechange. In the case of modifying the base calibration parameter values,the total power actual (the sum of the zone power commanded to all ofthe zones) is the same as the total power commanded (i.e., both are1680.5 Watts). In the case of adding a value of 10 Watts or multiplyingby a value of 105%, the total power actual is not the same as the totalpower commanded (i.e., total power actual is 1690.5 Watts and totalpower commanded is 1680.5 Watts). Each different remaining zone 214,218, and 220 may likewise be calibrated at the same time.

It is understood that the calibration process may account forinteractions between each different zone 214, 216, 218, and 220. Assuch, when calibrating each different zone 214, 216, 218, and 220, itmay be advantageous to account for interactions between the differentzones by not compensating the base calibration by the full amount ofdetermined response change. For example, after determining a responsechange for the lamp modules of the different zones 214, 216, 218, and220 during a first wafer processing cycle, the response change for thelamp modules of the different zones 214, 216, 218, and 220 is onlypartially compensated, based on observed zone interactions. Thereafter,another response change for the lamp modules of the different zones 214,216, 218, and 220 is determined during a second wafer processing cycleand only partially compensated, based on observed zone interactions. Howmuch to partially compensate per cycle may be model or rule based andincorporated within an overall control system or algorithm, or may bebased on user observation and/or judgment. This approach accounts forinteractions between each different zone 214, 216, 218, and 220 andlimits over compensation for the determined response change which mayotherwise result.

The calibration process of method 100 may be implemented within acontrol system of a computer. The computer, for example, may include acentral processing unit (CPU), input/output (I/O) for sending controlsignals to and from the wafer processing apparatus 200, storage mediumsuch as random access memory (RAM), read only memory (ROM), FLASHmemory, hard disk, compact disk (CD), or other suitable storage mediumfor storing software including control algorithms and calibrationsutilized for controlling the lamp modules of the zones 214, 216, 218,and 220 of the wafer processing apparatus 200.

The above embodiments of method 100 and wafer processing apparatus 200produce uniform temperature profiles across a wafer during waferprocessing such as CVD, RTP, annealing, doping, etching, and otherprocesses. For example, prior to production or after preventivemaintenance, the disclosed method 100 and wafer processing apparatus 200allow for characterization and providing a zone-by-zone base calibrationof lamp modules to thereby achieve a substantially uniform temperatureprofile across the wafer. Further, during production, the disclosedmethod 100 and wafer processing apparatus 200 allow for determiningefficiency decay of lamp modules and providing a real-time zone-by-zonecalibration of the lamp modules, to thereby maintain a substantiallyuniform temperature profile across the wafer. Because the real-timecalibration process allows for calibrating while the wafer processingapparatus 200 is in an online state (like during wafer processing orwhile idle between runs), the wafer processing apparatus 200 does nothave to be taken offline to be characterized with time consuming andcostly methods that utilize metrology tools. As such, the disclosedmethod 100 and wafer processing apparatus 200 increase wafer per hour(throughput), improve production quality and uniformity which ultimatelyimprove device performance, and reduce cost by allowing for onlinereal-time calibration and reduction of metrology tool loading. Differentembodiments may have different advantages, and no particular advantageis necessarily required of any embodiment.

Thus, provided is an apparatus. The exemplary apparatus includes a waferprocessing chamber. The apparatus further includes radiant heatingelements disposed in different zones and operable to heat differentportions of a wafer located within the wafer processing chamber. Theapparatus further includes sensors disposed outside the wafer processingchamber and operable to monitor energy from the radiant heating elementsdisposed in the different zones. The apparatus further includes acomputer configured to utilize the sensors to characterize the radiantheating elements disposed in the different zones and to provide acalibration for the radiant heating elements disposed in the differentzones such that a substantially uniform temperature profile ismaintained across a surface of the wafer.

In some embodiments, the different zones of the radiant heating elementsare four different zones, and the sensors are disposed in four differentzones corresponding to the four different zones of the radiant heatingelements. In various embodiments, the radiant heating elements include:a first plurality of radiant heating elements disposed above the waferin a first zone and operable to heat an inner portion of the wafer; asecond plurality of radiant heating elements disposed above the wafer ina second zone and operable to heat an outer portion of the wafer; athird plurality of radiant heating elements disposed below the wafer ina third zone and operable to heat an inner portion of the wafer; and afourth plurality of radiant heating elements disposed below the wafer ina fourth zone and operable to heat an outer portion of the wafer. Infurther embodiments, the sensors include: a first plurality of sensorsoperable to monitor energy from the first plurality of radiant heatingelements; a second plurality of sensors operable to monitor energy fromthe second plurality of radiant heating elements; a third plurality ofsensors operable to monitor energy from the third plurality of radiantheating elements; and a fourth plurality of sensors operable to monitorenergy from the fourth plurality of radiant heating elements. In certainembodiments, the second plurality of sensors circumscribe the firstplurality of sensors, and the fourth plurality of sensors circumscribethe third plurality of sensors. In some embodiments, the first andsecond plurality of sensors are located at a first distance less thanabout 30 cm from the first and second plurality of radiant heatingelements, and the third and fourth plurality of sensors are located at asecond distance less than about 30 cm from the third and fourthplurality of radiant heating elements. In various embodiments, theradiant heating elements are halogen lamps. In certain embodiments, thesensors are thermocouples.

Also provided is a wafer processing system. The exemplary waferprocessing system includes a wafer processing chamber, a plurality oftop and bottom radiant heating elements, and a plurality of top andbottom sensors. The system further includes at least one system coupledto the wafer processing chamber and operable to perform at least waferprocessing process on a wafer located within the wafer processingchamber. The system includes a calibration module operable tocharacterize the plurality of top and bottom radiant heating elements byutilizing measurements produced by the plurality of top and bottomsensors during a wafer processing process performed by the at least onesystem and to provide a calibration for the plurality of top and bottomradiant heating elements based on the characterization.

In some embodiments, the plurality of top radiant heating elements aredisposed in a center top zone and in an edge top zone; and the pluralityof bottom radiant heating elements are disposed in a center bottom zoneand in an edge bottom zone. In various embodiments, the plurality of topsensors are disposed in the center top zone and in the edge top zone,and the plurality of bottom sensors are disposed in the center bottomzone and in the edge bottom zone. In certain embodiments, the pluralityof top radiant heating elements disposed in the edge top zonecircumscribe the plurality of top radiant heating elements disposed inthe center top zone, and the plurality of bottom radiant heatingelements disposed in the edge bottom zone circumscribe the plurality ofbottom radiant heating elements disposed in the center bottom zone. Insome embodiments, the plurality of top sensors disposed in the centertop zone are operable to measure a temperature in the center top zone,the plurality of top sensors disposed in the edge top zone are operableto measure a temperature in the edge top zone, the plurality of bottomsensors disposed in the center bottom region are operable to measure atemperature in the center bottom region, and the plurality of bottomsensors disposed in the edge bottom zone are operable to measure atemperature in the edge bottom zone.

Also provided is a method. The exemplary method includes providing awafer processing chamber. The method further includes providing aplurality of radiant heating elements disposed in different zonesoutside the wafer processing chamber and operable to heat differentportions of a production wafer disposed within the wafer processingchamber during a wafer processing process. The method further includesproviding a plurality of sensors disposed in the different zones outsidethe wafer processing chamber and operable to monitor heat produced bythe radiant heating elements during the wafer processing process. Themethod further includes performing a real-time calibration process thatcharacterizes response change of the radiant heating elements to therebymaintain a substantially uniform temperature profile across a surface ofthe production wafer disposed within the wafer processing chamber.

In some embodiments, the method further includes before performing thereal-time calibration process, performing an initial base calibrationprocess thereby initially characterizing the radiant heating elements tothereby achieve a substantially uniform temperature profile across asurface of a test wafer disposed within the wafer processing chamber.

In some embodiments, performing the real-time calibration processincludes: using the plurality of sensors to monitor heat produced by theplurality of radiant heating elements during the wafer processingprocess; characterizing the plurality of radiant heating elements, thecharacterizing including determining a response change of the pluralityof radiant heating elements over time; and providing a real-timecalibration based on the characterizing of the plurality of radiantheating elements. In various embodiments, performing the initial basecalibration process includes: using the plurality of sensors to monitorheat produced by the plurality of radiant heating elements during a testwafer processing process; characterizing the plurality of radiantheating elements, the characterizing including determining an initialresponse of the plurality of radiant heating elements; and providing abase calibration based on the characterizing of the plurality of radiantheating elements. In certain embodiments, performing the initial basecalibration process includes providing a base calibration that affectsthe power provided to the plurality of radiant heating elements disposedin the different zones, and performing the real-time calibration processincludes modifying the base calibration that affects the power providedto the plurality of radiant heating elements disposed in the differentzones without taking the wafer processing chamber in an offline state.In further embodiments, the base calibration includes base calibrationparameter values represented as a percentage power ratio for each zoneof the different zones. In some embodiments, the wafer processingprocess includes a process selected from the group consisting ofchemical vapor deposition (CVD), rapid thermal processing (RTP),annealing, and etching.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: providing a wafer processingchamber; providing a plurality of radiant heating elements disposed indifferent zones outside the wafer processing chamber and operable toheat different portions of a wafer disposed within the wafer processingchamber during a wafer processing process; providing a plurality ofsensors disposed in the different zones outside the wafer processingchamber between the wafer processing chamber and the plurality ofradiant heating elements, the sensors being operable to monitor heatproduced by the radiant heating elements during the wafer processingprocess; and performing a calibration process that characterizesresponse change of the radiant heating elements to thereby maintain asubstantially uniform temperature profile across a surface of theproduction wafer disposed within the wafer processing chamber.
 2. Themethod of claim 1, further comprising: performing an initial basecalibration process to initially characterize the radiant heatingelements to thereby achieve a substantially uniform temperature profileacross a surface of a test wafer disposed within the wafer processingchamber.
 3. The method of claim 2, wherein performing the initial basecalibration process includes: using the plurality of sensors to monitorheat produced by the plurality of radiant heating elements during a testwafer processing process; characterizing the plurality of radiantheating elements, the characterizing including determining an initialresponse of the plurality of radiant heating elements; and providing abase calibration based on the characterizing of the plurality of radiantheating elements.
 4. The method of claim 2, wherein: performing theinitial base calibration process includes providing a base calibrationthat affects an amount of power provided to the plurality of radiantheating elements disposed in the different zones, and performing thecalibration process includes modifying the base calibration that affectsthe power provided to the plurality of radiant heating elements disposedin the different zones without taking the wafer processing chamber in anoffline state.
 5. The method of claim 2, wherein the base calibrationincludes base calibration parameter values represented as a percentagepower ratio for each zone of the different zones.
 6. The method of claim1, wherein performing the calibration process includes: monitoring, bythe plurality of sensors, heat produced by the plurality of radiantheating elements during the wafer processing process; characterizing theplurality of radiant heating elements, the characterizing includingdetermining a response change of the plurality of radiant heatingelements over time; and providing a calibration based on thecharacterizing of the plurality of radiant heating elements.
 7. Themethod of claim 1, wherein the wafer processing process includes aprocess selected from the group consisting of chemical vapor deposition(CVD), rapid thermal processing (RTP), annealing, doping, and etching.8. A method comprising: heating different portions of a wafer locatedwithin a wafer processing chamber using radiant heating elementsdisposed in different zones; monitoring, by sensors disposed outside thewafer processing chamber between the wafer processing chamber and theradiant heating elements and facing the radiant heating elements, energyfrom the radiant heating elements disposed in the different zones; andcharacterizing, with the monitored energy, the radiant heating elementsdisposed in the different zones to provide a calibration for the radiantheating elements disposed in the different zones such that asubstantially uniform temperature profile is maintained across a surfaceof the wafer.
 9. The method of claim 8, wherein: the different zones ofthe radiant heating elements comprise four different zones, and thesensors are disposed in the four different zones corresponding to thefour different zones of the radiant heating elements.
 10. The method ofclaim 8, wherein the heating using the radiant heating elements furthercomprises: heating an inner portion of the wafer using a first pluralityof radiant heating elements disposed above the wafer in a first zone;heating an outer portion of the wafer using a second plurality ofradiant heating elements disposed above the wafer in a second zone;heating an inner portion of the wafer using a third plurality of radiantheating elements disposed below the wafer in a third zone; and heatingan outer portion of the wafer using a fourth plurality of radiantheating elements disposed below the wafer in a fourth zone.
 11. Themethod of claim 10, wherein the monitoring by the sensors furthercomprises: monitoring energy from the first plurality of radiant heatingelements by a first plurality of sensors; monitoring energy from thesecond plurality of radiant heating elements by a second plurality ofsensors; monitoring energy from the third plurality of radiant heatingelements by a third plurality of sensors; and monitoring energy from thefourth plurality of radiant heating elements by a fourth plurality ofsensors.
 12. The method of claim 11, wherein: the second plurality ofsensors circumscribe the first plurality of sensors, and the fourthplurality of sensors circumscribe the third plurality of sensors. 13.The method of claim 8, wherein the radiant heating elements are halogenlamps.
 14. The method of claim 8, wherein the sensors are thermocouples.15. A method comprising: heating different portions of a wafer locatedwithin a wafer processing chamber by a plurality of top and bottomradiant heating elements; monitoring energy from the plurality of topand bottom radiant heating elements using a plurality of top sensorsfacing the plurality of top radiant heating elements and situatedbetween the wafer processing chamber and the plurality of top radiantheating elements, and a plurality of bottom sensors facing the pluralityof bottom radiant heating elements and situated between the waferprocessing chamber and the plurality of bottom radiant heating elements;performing at least one wafer processing process on the wafer locatedwithin the wafer processing chamber using at least one system coupled tothe wafer processing chamber; characterizing the plurality of top andbottom radiant heating elements by utilizing measurements produced bythe plurality of top and bottom sensors during the at least one waferprocessing process performed by the at least one system; and providing acalibration for the plurality of top and bottom radiant heating elementsbased on the characterizing.
 16. The method of claim 15, wherein: theplurality of top radiant heating elements are disposed in a center topzone and in an edge top zone, and the plurality of bottom radiantheating elements are disposed in a center bottom zone and in an edgebottom zone.
 17. The method of claim 16, wherein: the plurality of topsensors are disposed in the center top zone and in the edge top zone,and the plurality of bottom sensors are disposed in the center bottomzone and in the edge bottom zone.
 18. The method of claim 17, whereinthe monitoring further comprises: measuring a temperature in the centertop zone by the plurality of top sensors disposed in the center topzone; measuring a temperature in the edge top zone by the plurality oftop sensors disposed in the edge top zone; measuring a temperature inthe center bottom region by the plurality of bottom sensors disposed inthe center bottom region; and measuring a temperature in the edge bottomzone by the plurality of bottom sensors disposed in the edge bottomzone.
 19. The method of claim 16, wherein: the plurality of top radiantheating elements disposed in the edge top zone circumscribe theplurality of top radiant heating elements disposed in the center topzone, and the plurality of bottom radiant heating elements disposed inthe edge bottom zone circumscribe the plurality of bottom radiantheating elements disposed in the center bottom zone.
 20. The method ofclaim 8, wherein the radiant heating elements includes a first radiantheating element disposed above the wafer and a second radiant heatingelement disposed under the wafer.